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| UMT2907A / SST2907A / MMST2907A Transistors PNP Medium Power Transistor (Switching) UMT2907A / SST2907A / MMST2907A Features 1) BVCEO< -60V (IC=-10mA) 2) Complements the UMT2222A / SST2222A / MMST2222A. Dimensions (Unit : mm) UMT2907A Package, marking and packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) UMT2907A SST2907A MMST2907A UMT3 R2F T106 3000 SST3 R2F T116 3000 SMT3 R2F T146 3000 ROHM : UMT3 EIAJ : SC-70 (1) Emitter (2) Base (3) Collector SST2907A Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current UMT2907A, SST2907A, Collector power dissipation MMST2907A SST2907A Junction temperature Storage temperature Mounted on a 7 x 5 x 0.6mm ceramic substrate. Symbol VCBO VCEO VEBO IC Limits -60 -60 -5 -0.6 0.2 0.35 150 -55 to +150 Unit V V V A W W C C ROHM : SST3 (1) Emitter (2) Base (3) Collector MMST2907A PC Tj Tstg ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO VCE(sat) VBE(sat) Min. -60 -60 -5 - - - - - - - 75 100 DC current transfer ratio hFE 100 100 50 200 - - - - - - - - Typ. - - - - - - - - - - - - - - - - - - - - - - - - Max. - - - -100 -100 -100 -0.4 -1.6 -1.3 -2.6 - - - 300 - - 8 30 50 10 40 100 80 30 MHz pF pF ns ns ns ns ns ns - Unit V V V nA nA V V IC= -10A IC= -10mA IE= -10A VCB= -50V VCB= -30V VEB= -3V IC/IB= -150mA/ -15mA IC/IB= -500mA/ -50mA IC/IB= -150mA/ -15mA IC/IB= -500mA/ -50mA VCE= -10V, IC= -0.1mA VCE= -10V, IC= -1mA VCE= -10V, IC= -10mA VCE= -10V, IC= -150mA VCE= -10V, IC= -500mA VCE= -20V, IE=50mA, f=100MHz VCB= -10V, f=100kHz VEB= -2V, f=100kHz VCC= -30V, VBE(OFF)= -1.5V, IC= -150mA, IB1= -15mA VCC= -30V, VBE(OFF)= -1.5V, IC= -150mA, IB1= -15mA VCC= -30V, VBE(OFF)= -1.5V, IC=- 150mA, IB1= -15mA VCC= -30V, IC= -150mA, IB1=IB2= -15mA VCC= -30V , IC= -150mA, IB1=IB2= -15mA VCC= -30V, IC= -150mA, IB1=IB2= -15mA Conditions Transition frequency Collector output capacitance Emitter input capacitance Turn-on time Delay time Rise time Turn-off time Storage time Fall time fT Cob Cib ton td tr toff tstg tf Rev.B 1/4 UMT2907A / SST2907A / MMST2907A Transistors Electrical characteristic curves Ta=25C COLLECTOR CURRENT : IC (mA) 600 BASE-EMITTER SATURATION VOLTAGE : VBE (sat) (V) 100 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Ta=25C IC / IB=10 500 400 50 300 200 100 1B=0A 0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter output characteristics Fig.2 Base-emitter saturation voltage vs. collector current 1000 Ta=25C DC CURRENT GAIN : hFE VCE=10V 100 1V 10 0.1 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 Fig.3 DC current gain vs. collector current ( I ) 1000 VCE=10V DC CURRENT GAIN : hFE Ta=125C Ta=25C 100 Ta=-55C 10 0.1 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 Fig.4 DC current gain vs. collector current ( II ) Rev.B 2/4 UMT2907A / SST2907A / MMST2907A Transistors 1000 COLLECTOR-EMITTER SATURATION VOLTAGE : VCE (sat) (V) Ta=25C VCE=10V f=1kHz Ta=25C IC / IB=10 0.3 AC CURRENT GAIN : hFE 0.2 100 0.1 10 0.1 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.5 AC current gain vs. collector current Fig.6 Collector-emitter saturation voltage vs. collector current CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz) BASE-EMITTER ON VOLTAGE : VBE(on) (V) COLLECTOR-EMITTER VOLTAGE : VCE(V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Ta=25C VCE=10V 1000 100 100MHz 300MHz 10 200MHz Ta=25C VCE=10V Ta=25C 100 250MHz 1 200MHz 0.1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.7 Grounded emitter propagation characteristics Fig.8 Gain bandwidth product vs. collector current Fig.9 Gain bandwidth product 100 Ta=25C f=1MHz 1000 Ta=25C IC / IB=10 500 Ta=25C VCC=30V IC / IB=10 CAPACITANCE (pF) 10 Cob 100 VCC=30V 10V RISE TIME : tr (ns) Cib TURN ON TIME : ton (ns) 100 10 1 0.1 10 1 10 REVERSE BIAS VOLTAGE (V) 100 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 5 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.10 Input/output capacitance vs. voltage Fig.11 Turn-on time vs.collector current Fig.12 Rise time vs. collector current Rev.B 3/4 UMT2907A / SST2907A / MMST2907A Transistors 1000 Ta=25C VCC=30V IC=10IB1=10IB2 1000 Ta=25C VCC=30V IC=10IB1=10IB2 STORAGE TIME : ts (ns) 100 10 FALL TIME : tf (ns) 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 100 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.13 Storage time vs. collector current Fig.14 Fall time vs. collector current Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright (c) 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0 |
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